3.5 - 85 3.5 100v thru 500v, up to 10 amp, n-channel power mosfets in a hermetic surface mount package 4 11 r1 supersedes 1 05 r0 power mosfet in hermetic isolated surface mount package features ? isolated hermetic metal package ? fast switching, low drive current ? ease of paralleling for added power ? low r ds(on) ? available screened to mil-s-19500, tx, txv and s levels description this series of hermetically packaged surface mount products feature the latest advanced mosfet and packaging technology. they are ideally suited for military requirements where small size, high performance and high reliability are required, and in surface mount applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. part number v ds r ds(on) i d om6038sm 100v .20? 14a om6039sm 200v .44? 9a OM6040SM 400v 1.05? 5a om6041sm 500v 1.60? 4a schematic pin connection om6038sm om6039sm OM6040SM om6041sm maximum ratings @ t c = 25 c pin 1: source pin 2: drain pin 3: gate case: isolated 2 drain 1 source 3 gate 2 3 1
3.5 - 86 om6038sm - om6041sm 3.5 electrical characteristics: ( t c = 25c unless otherwise noted) electrical characteristics: ( t c = 25c unless otherwise noted) static p/n om6101st / om6038sm (100v) static p/n om6039sm (200v) parameter min. typ. max. units test conditions parameter min. typ. max. units test conditions bv dss drain-source breakdown 100 v v gs = 0, bv dss drain-source breakdown 200 v v gs = 0, voltage i d = 250 a voltage i d = 250 a v gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 av gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 a i gss gate-body leakage (om6101) 500 na v gs = 12.8 v i gss gate-body leakage (om6102) 500 na v gs = 12.8 v i gss gate-body leakage (om6001) 100 na v gs = 20 v i gss gate-body leakage (om6002) 100 na v gs = 20 v i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, t c = 125 c t c = 125 c i d(on) on-state drain current 1 14 a v ds 2 v ds(on) , v gs = 10 v i d(on) on-state drain current 1 9.0 a v ds 2 v ds(on) , v gs = 10 v v ds(on) static drain-source on-state 1.2 1.60 v v gs = 10 v, i d = 8 a v ds(on) static drain-source on-state 1.25 2.2 v v gs = 10 v, i d = 5.0 a voltage 1 voltage 1 r ds(on) static drain-source on-state 0.20 ? v gs = 10 v, i d = 8 a r ds(on) static drain-source on-state 0.44 ? v gs = 10 v, i d = 5.0 a resistance 1 resistance 1 r ds(on) static drain-source on-state 0.40 ? v gs = 10 v, i d = 8 a, r ds(on) static drain-source on-state 0.88 ? v gs = 10 v, i d = 5.0 a, resistance 1 t c = 125 c resistance 1 t c = 125 c dynamic dynamic g fs forward transductance 1 4.0 s ( ? ) v ds 2 v ds(on) , i d = 8 a g fs forward transductance 1 3.0 5.8 s ( ? ) v ds 2 v ds(on) , i d = 5.0 a c iss input capacitance 750 pf v gs = 0 c iss input capacitance 780 pf v gs = 0 c oss output capacitance 250 pf v ds = 25 v c oss output capacitance 150 pf v ds = 25 v c rss reverse transfer capacitance 100 pf f = 1 mhz c rss reverse transfer capacitance 55 pf f = 1 mhz t d(on) turn-on delay time 15 ns v dd = 30v, i d ? 8 a t d(on) turn-on delay time 9 ns v dd = 75v, i d ? 5.0 a t r rise time 35 ns r g = 7.5 ? , v ds = 10 v t r rise time 18 ns r g = 7.5 ? , v gs =10 v t d(off) turn-off delay time 38 ns t d(off) turn-off delay time 45 ns t f fall time 23 ns t f fall time 27 ns body-drain diode ratings and characteristics body-drain diode ratings and characteristics i s continuous source current - 14 a modified mospower i s continuous source current - 9 a modified mospower (body diode) symbol showing (body diode) symbol showing i sm source current 1 - 56 a the integral p-n i sm source current 1 - 36 a the integral p-n (body diode) junction rectifier. (body diode) junction rectifier. v sd diode forward voltage 1 - 2.5 v t c = 25 c, i s = -14 a, v gs = 0 v sd diode forward voltage 1 - 2 v t c = 25 c, i s = -9 a, v gs = 0 v sd diode forward voltage 1 - 2.5 v t c = 25 c, i s = -12 a, v gs = 0 v sd diode forward voltage 1 - 2 v t c = 25 c, i s = -8 a, v gs = 0 t rr reverse recovery time 100 ns t j = 150 c, i f = i s ,t rr reverse recovery time 250 ns t j = 150 c, i f = i s , dl f /ds = 100 a/ s dl f /ds = 100 a/ s 1 pulse test: pulse width 300 sec, duty cycle 2%. 1 pulse test: pulse width 300 sec, duty cycle 2%. g d s g d s ( ? ) ( ? )
3.5 - 87 om6038sm - om6041sm 3.5 electrical characteristics: ( t c = 25c unless otherwise noted) electrical characteristics: ( t c = 25c unless otherwise noted) static p/n om6103st / OM6040SM (400v) static p/n om6104st / om6041sm (500v) parameter min. typ. max. units test conditions parameter min. typ. max. units test conditions bv dss drain-source breakdown 400 v v gs = 0, bv dss drain-source breakdown 500 v v gs = 0, voltage i d = 250 a voltage i d = 250 a v gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 av gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 a i gss gate-body leakage (om6103) 500 na v gs = 12.8 v i gss gate-body leakage (om6104) 500 na v gs = 12.8 v i gss gate-body leakage (om6003) 100 na v gs = 20 v i gss gate-body leakage (om6004) 100 na v gs = 20 v i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, t c = 125 c t c = 125 c i d(on) on-state drain current 1 5.5 a v ds 2 v ds(on) , v gs = 10 v i d(on) on-state drain current 1 4.5 a v ds 2 v ds(on) , v gs = 10 v v ds(on) static drain-source on-state 2.4 3.15 v v gs = 10 v, i d = 3.0 a v ds(on) static drain-source on-state 3.25 4.00 v v gs = 10 v, i d = 2.5 a voltage 1 voltage 1 r ds(on) static drain-source on-state 1.05 ? v gs = 10 v, i d = 3.0 a r ds(on) static drain-source on-state 1.6 ? v gs = 10 v, i d = 2.5 a resistance 1 resistance 1 r ds(on) static drain-source on-state 2.0 ? v gs = 10 v, i d = 3.0 a, r ds(on) static drain-source on-state 2.9 3.3 ? v gs = 10 v, i d = 2.5 a, resistance 1 t c = 125 c resistance 1 t c = 125 c dynamic dynamic g fs forward transductance 1 3.0 3.6 s ( ? ) v ds 2 v ds(on) , i d = 3.0 a g fs forward transductance 1 2.5 2.8 s ( ? ) v ds 2 v ds(on) , i d = 2.5 a c iss input capacitance 700 pf v gs = 0 c iss input capacitance 700 pf v gs = 0 c oss output capacitance 70 pf v ds = 25 v c oss output capacitance 90 pf v ds = 25 v c rss reverse transfer capacitance 20 pf f = 1 mhz c rss reverse transfer capacitance 30 pf f = 1 mhz t d(on) turn-on delay time 18 ns v dd = 175 v, i d ? 3.0 a t d(on) turn-on delay time 18 ns v dd = 225 v, i d ? 2.5 a t r rise time 20 ns r g = 10 ? ,v gs = 10 v t r rise time 20 ns r g = 7.5 ? , v gs = 10 v t d(off) turn-off delay time 40 ns t d(off) turn-off delay time 42 ns t f fall time 25 ns t f fall time 25 ns body-drain diode ratings and characteristics body-drain diode ratings and characteristics i s continuous source current - 5.5 a modified mospower i s continuous source current - 4.5 a modified mospower (body diode) symbol showing (body diode) symbol showing i sm source current 1 - 22 a the integral p-n i sm source current 1 - 18 a the integral p-n (body diode) junction rectifier. (body diode) junction rectifier. v sd diode forward voltage 1 - 1.6 v t c = 25 c, i s = -5.5 a, v gs = 0 v sd diode forward voltage 1 - 1.4 v t c = 25 c, i s = -4.5 a, v gs = 0 v sd diode forward voltage 1 - 2.5 v t c = 25 c, i s = -4.5 a, v gs = 0 v sd diode forward voltage 1 - 2 v t c = 25 c, i s = -4 a, v gs = 0 t rr reverse recovery time 470 ns t j = 150 c, i f = i s ,t rr reverse recovery time 430 ns t j = 150 c, i f = i s , dl f /ds = 100 a/ s dl f /ds = 100 a/ s 1 pulse test: pulse width 300 sec, duty cycle 2%. 1 pulse test: pulse width 300 sec, duty cycle 2%. g d s g d s ( ? ) ( ? )
om6038sm - om6041sm 3.5 absolute maximum ratings (t c = 25c unless otherwise noted) parameter om6038 om6039 om6040 om6041 units v ds drain-source voltage 100 200 400 500 v v dgr drain-gate voltage (r gs = 1 m?) 100 200 400 500 v i d @ t c = 25c continuous drain current 2 14 9 5 4 a i d @ t c = 100c continuous drain current 2 7 5 3 2 a i dm pulsed drain current 1 45 35 18 10 a p d @ t c = 25c maximum power dissipation 50 50 50 50 w p d @ t c = 100c maximum power dissipation 25 25 25 25 w junction to case linear derating factor 0.4 0.4 0.4 0.4 w/c junction to ambient linear derating factor .0125 .0125 .0125 .0125 w/c t j operating and t stg storage temperature range -55 to 150 -55 to 150 -55 to 150 -55 to 150 c lead solder temperature (1/16" from case for 5 secs.) 225 225 225 225 c 1 pulse test: pulse width 300 sec. duty cycle 2%. 2 package pin limitations = 15 amps thermal resistance r thjc junction-to-case 2.5 c/w r thja junction-to-ambient 80 c/w free air operation power derating mechanical outline .425 .200 .100 .350 min. .080 .160 .020 .020 .035 wide flat 3 plcs. .115 .425 p d - power dissipation (watts) 90 75 60 45 30 15 0 0 25 50 75 100 125 150 175 t c - case temperature (c) r jc = 2.5 c/w
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